批量生产的第一代超LSI 以半导体存储器为中心的动态(D)RAM,目前已从16K位发展到64K位,静态(S)随机存取存储器从4K位发展到16K位,完成了对第一代超大规模集成电路器件的开发,经用户试用和确认结果合格,最终进入了实用化阶段。 目前,一部分公司业已发展了256K位动态随机存取存储器,64K位静态随机存取存储器等所谓第2代正式超大规模集成电路器件,由今年春季开始已部分地投入市场。至今为止,仅在2年之中,集成度扩大了四倍,然而,由16K位过渡到64K位器件则需要3.5～4年左右。理由是 Mass production of the first generation of ultra-LSI semiconductor memory-centric dynamic (D) RAM, has now grown from 16K to 64K bits, static (S) random access memory from 4K to 16K, completed the first Development of a generation of very large scale integrated circuit devices, the user trial and confirm the results pass, and finally entered the practical stage. At present, some companies have developed 256K-bit DRAM, 64K-bit static random access memory and so-called second-generation formal VLSI devices, which have been partially put into the market by spring of this year. To date, integration has quadrupled in just two years, yet transitioning from 16K to 64K takes about 3.5 to 4 years. The reason is