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利用射频等离子体辅助分子束外延技术在蓝宝石衬底上外延了晶体质量较好的单晶InAlGaN薄膜.在生长InAlGaN外延层时,获得了外延膜的二维生长.卢瑟福背散射测量结果表明,InAlGaN外延层中In,Al和Ga的组分分别为2%,22%和76%,并且元素的深度分布比较均匀.InAlGaN(0002)三晶X射线衍射摇摆曲线的半高宽为4·8′.通过原子力显微镜观察外延膜表面存在小山丘状的突起和一些小坑,测量得到外延膜表面的均方根粗糙度为2·2nm.利用光电导谱测量InAlGaN的带隙为3·76eV.
The single crystal InAlGaN thin film with better crystal quality was epitaxially grown on the sapphire substrate by RF plasma-assisted molecular beam epitaxy.The two-dimensional growth of the epitaxial film was obtained during the growth of the InAlGaN epitaxial layer.The results of Rutherford backscattering , The InAlGaN epitaxial layers have In, Al and Ga components of 2%, 22% and 76%, respectively, and their elemental depth distributions are relatively uniform. The FWHM of InAlGaN (0002) 8 ’observed by atomic force microscopy epitaxial film surface hillocks and small pits on the surface, measured by epitaxial film surface root mean square roughness of 2. 2nm measured by photoconductive spectrum InAlGaN band gap of 3.76eV .