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采用磁控溅射方法制备了Ta(10nm)/NiFe(8nm)/Cu(2.6nm)/NiFe(3.6nm)/FeMn(9nm)/Ta(10nm)自旋阀多层膜.在Cu/NiFe界面沉积适量厚度的Bi原子能够有效地提高交换耦合场,沉积过量的Bi原子会导致交换耦合场下降.X射线光电子能谱分析结果表明:沉积在Cu/NiFe界面的Bi原子可以有效地抑制Cu原子在NiFe层表面的偏聚;当沉积过量的Bi原子时,Bi原子会进一步迁移到FeMn中,形成杂质,从而破坏了FeMn的反铁磁性,使交换耦合场降低.
The multilayered films of Ta (10nm) / NiFe (8nm) / Cu (2.6nm) / NiFe (3.6nm) / FeMn (9nm) / Ta Deposition of Bi atoms on the Cu / NiFe interface can effectively increase the exchange coupling field and deposition of excess Bi atoms leads to the decrease of the exchange coupling field.The results of X-ray photoelectron spectroscopy show that the Bi atoms deposited on the Cu / NiFe interface can effectively suppress Cu The atoms are segregated on the surface of the NiFe layer. When excessive Bi atoms are deposited, the Bi atoms further migrate into the FeMn to form impurities, thereby destroying the antiferromagnetic properties of FeMn and reducing the exchange coupling field.