半导体中等离子激发的能量与其载流子浓度有一定的关系。利用高分辨率电子能量损失谱仪(HREELS)检测到的等离子激发能量的变化则可以反应出某些半导体表面区域载流子浓度的变化。对于InSb(100)的研究表明:(1)低能离子溅射(≤500eV)以及随后的退火处理都在n型和p型InSb(100)近表面区域形成一个自由载流子累积层;(2)低能离子的这种损伤效应延伸到100nm以下的深度。 There is a certain relationship between the energy excited by plasma in semiconductor and its carrier concentration. The change of the plasma excitation energy detected by the high resolution electron energy loss spectrometer (HREELS) can reflect the change of the carrier concentration in some semiconductor surface regions. Studies of InSb (100) show that: (1) low-energy ion sputtering (≤500eV) and subsequent annealing both form a free carrier accumulation layer in the near-surface region of n-type and p-type InSb ) This damage effect of low-energy ions extends to depths below 100 nm.