详细分析了限制开关电流(SI)精度的主要误差,在共源-共栅组态存储单元的基础上,根据在开关晶体管关断前消除反型层可以改善电荷注入误差的原理,提出一种新型低误差开关电流存储单元。其主要思想是通过消除开关晶体管沟道内的可动电荷、降低存储单元的输出电导,以改善电荷注入误差和电导比误差。采用TSMC 0.25μm CMOS模型参数进行HSPICE仿真,结果表明,该结构能够很好地降低电路误差,提高开关电流电路的精度。 In this paper, the main error that limits the accuracy of the switch current (SI) is analyzed in detail. Based on the memory cells of the cascode configuration, the principle of eliminating the charge injection error can be improved by eliminating the inversion layer before the switch transistor is turned off. New low error switching current storage unit. The main idea is to reduce the output conductance of the memory cell by eliminating the movable charges in the channel of the switching transistor so as to improve the charge injection error and the conductance error. The TSMC 0.25μm CMOS model parameters were used to simulate HSPICE. The results show that the proposed method can reduce the circuit error and improve the precision of the switching current circuit.