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采用浸渍-提拉法制备ZnWO_4薄膜,研究其在染料敏化太阳电池(DSSCs)中的光电性能。使用XRD、SEM、UV-vis、EIS及I-V对Zn WO4薄膜的结构及光电性能进行表征。结果表明:制备的ZnWO_4薄膜具有较好的结晶性能,属黑钨矿型结构;薄膜颗粒均匀;为直接带隙半导体材料,带隙为2.85eV;由ZnWO_4薄膜组装的DSSCs的短路电流密度、开路电压及光电转换效率的值分别为0.15mA/cm~2、627mV及0.038%。
The ZnWO_4 thin films were prepared by impregnation-Czochralski method and their photoelectric properties were studied in dye-sensitized solar cells (DSSCs). The structure and photoelectric properties of Zn WO4 thin films were characterized by XRD, SEM, UV-vis, EIS and I-V. The results show that the as-prepared ZnWO_4 thin films have good crystallization properties and belong to the wolframite type structure. The thin film particles are homogeneous. The direct band gap semiconductor material has a band gap of 2.85 eV. The short circuit current density of the DSSCs assembled from the ZnWO_4 thin film, The values of voltage and photoelectric conversion efficiency were 0.15 mA / cm ~ 2,627 mV and 0.038%, respectively.