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研究了由致密PbZr0.38Ti0.62O3和多孔PbZr0.38Ti0.62O3膜层交替排列组成的多层膜在温度为420K时的介电行为.在102～106Hz的频率范围,观测到两种截然不同的介电驰豫.位于低频区的介电损耗峰归因于空间电荷极化.通过俄歇电子谱和电子顺磁共振谱分析,初步判定遵从Arrhenius律、热激活能为0.49eV的高频介电驰豫则起源于氧空位V¨0和Ti3+形成的极性缺陷复合体V¨0-Ti3+对交变电场的响应.
The dielectric behavior of multilayer films composed of dense PbZr0.38Ti0.62O3 and porous PbZr0.38Ti0.62O3 films alternately arranged at 420 K was investigated. Two completely distinct Dielectric relaxation. The dielectric loss in the low frequency region is attributed to the space charge polarization. By Auger electron spectroscopy and electron paramagnetic resonance spectroscopy, it was initially determined that the Arrhenius law obeyed and the thermal activation energy was 0.49eV Electrical relaxation originates from the response of the polar defect complex V¨¨0-Ti3 + formed by oxygen vacancies V¨¨O and Ti3 + to alternating electric fields.