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We demonstrate that a low-temperature GaN insertion layer could significantly improve the surface morphology of non-polar a-plane GaN.The two key factors in improving the surface morphology of non-polar a-plane GaN are growth temperature and growth time of the GaN insertion layer.The root-mean-square roughness of a-plane GaN is reduced by 75％ compared to the sample without the GaN insertion layer.Meanwhile,the GaN insertion layer is also beneficial for improving crystal quality.This work provides a simple and effective method to improve the surface morphology of non-polar a-plane GaN.