论文部分内容阅读
基于电化学沉积技术在金属基底上制作了一种新型的无源MEMS惯性开关。针对高深宽比、细线宽微电铸用光刻胶模具制作过程中,由于SU-8胶膜严重侧蚀导致的胶膜制作困难、质量低下的问题,进行了紫外光刻试验研究。试验研究了不同曝光剂量和后烘时间对SU-8胶光刻效果的影响,优化了光刻工艺参数。采用降低曝光剂量和延长后烘时间相结合的方法解决了高深宽比、细线宽SU-8胶膜制作困难的问题,制作出高质量的微电铸用光刻胶模具。最后,在上述试验结果基础上制作了一种高深宽比、无源MEMS惯性开关。其外形尺寸为3935μm×3935μm×234μm,其中最细线宽12μm,单层最大深宽比达10∶1,多层最大深宽比达20∶1。
A new type of passive MEMS inertial switch was fabricated on metal substrate based on electrochemical deposition technology. Aiming at the problems of high aspect ratio and thin line width of photoresist mold for micro-electroforming, the UV-lithography experiment was carried out due to the difficulty and poor quality of the film produced by serious side etching of SU-8 adhesive film. The influence of different exposure dose and post-baking time on the photolithography effect of SU-8 was studied, and the lithography process parameters were optimized. The method of reducing the exposure dose and prolonging the post-baking time solves the problem of high aspect ratio and thin line width of SU-8 film production, and produces a high quality photoresist mold for micro-electroforming. Finally, based on the above test results, a high aspect ratio, passive MEMS inertial switch was fabricated. Its external dimensions are 3935μm × 3935μm × 234μm, of which the thinnest linewidth is 12μm, the maximum aspect ratio of single layer is up to 10: 1 and the maximum aspect ratio of multilayer is up to 20: 1.