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在通常的 MOSFET基础上 ,根据电荷流动电容器原理 ,设计了一种新型的栅区开槽的电荷流动场效应管(CFT) ,并以一种新型有机半导体材料——三明治型稀土金属元素镨双酞菁配合物 (Pr[Pc(OC8H1 7) 8]2 为气敏材料 ,取代栅极中的间隙位置 .利用 L B超分子薄膜技术 ,将 Pr[Pc(OC8H1 7) 8]2 以 1∶ 3的配比与十八烷醇 (OA)混合的 L B多层膜 (Pr[Pc(OC8H1 7) 8]2 - OA)拉制在 CFT上 ,形成了一种新型的具有 CFT结构的 L B膜 NO2 气敏传感器 .当对该器件加一栅压 VGS时 (大于阈值电压 ) ,由于高阻敏感膜充电达 VGS需要一段时间 ,因而漏电流出现延迟现象 .这种弛豫与 NO2 气体浓度有关 ,室温下探测灵敏度可达 5 ppm NO2
Based on the common MOSFET, a novel gate-slotted charge-flow field-effect transistor (CFT) is designed according to the principle of charge-flow capacitor. A novel organic semiconductor material, sandwich type rare earth metal, Pr [Pc (OC8H1 7) 8] 2 is a gas-sensitive material instead of the gap position in the gate electrode. Pr [Pc (Pr [Pc (OC8H1 7) 8] 2 - OA) mixed with octadecyl alcohol (OA) was drawn on CFT to form a novel LB film NO2 with CFT structure Gas Sensor When the device is subjected to a gate voltage of VGS (greater than the threshold voltage), the leakage current appears to be delayed due to the time it takes for the high resistance sensitive membrane to reach VGS. This relaxation is related to NO2 gas concentration and room temperature Lower detection sensitivity up to 5 ppm NO2