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CuInSe2 (简称CIS)薄膜是太阳电池吸收层的重要材料。利用连续溅射金属层后硒化法制备CuInSe2 薄膜。薄膜的XRD图样显示 :CuInSe2 薄膜的形成与制备条件密切相关 ;在较大Cu、In原子比的范围内 ,在一定的硒化条件下 ,都可以形成以CuInSe2 为基体的薄膜。SEM图样显示 ,不同Cu/In比值的表面形貌有较大的不同。Cu/In接近 1时 ,薄膜的表面形貌均质且颗粒致密。Raman谱图显示 ,Cu、In配比不当会使薄膜中出现少量的杂相组织 ,在 6 32 .8nm激发波波长下 ,还有 2 10cm-1和 2 2 9cm-1两处的特征峰。通过光吸收测量得到CuInSe2 的带隙是 1.0 5eV ,通过电导率测量得到其激活能为 0 .4 86eV。
CuInSe2 (referred to as CIS) film is an important material for the solar cell absorber layer. CuInSe2 Thin Films Prepared by Continuous Sputtering Metal Layer Selenide Method. The XRD pattern of the film shows that the formation of CuInSe2 film is closely related to the preparation conditions. In the range of larger atomic ratio of Cu and In, CuInSe2 can be formed under a certain condition of selenization. The SEM images show that the surface topography with different Cu / In ratios is quite different. When the Cu / In close to 1, the surface morphology of the film is homogeneous and the particles are compact. Raman spectra show that the mismatch of Cu and In results in a small amount of heterogenous phase in the films, and the characteristic peaks of 2 10cm-1 and 2 2 9cm-1 are observed at 632.8nm excitation wavelength. The band gap of CuInSe2 was 1.05 eV as measured by light absorption measurement, and its activation energy was found to be 0.086eV by conductivity measurement.