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采用RF-PECVD技术,在玻璃衬底上低温沉积了优质微晶硅薄膜,并深入研究了硅烷浓度对微晶硅薄膜微结构及电学性质的影响。研究结果表明,微晶硅薄膜的沉积速率、平均晶粒尺寸、晶化率和电导率均呈现相似的变化规律,而谱中出现的拐点由硅烷浓度决定。该变化规律可通过相应的薄膜生长的微观理论得到合理的解释。
The RF-PECVD technique was used to deposit high-quality microcrystalline silicon thin films on glass substrates at low temperature. The effects of silane concentration on the microstructures and electrical properties of microcrystalline silicon thin films were also investigated. The results show that the deposition rate, the average grain size, the crystallization rate and the conductivity of the microcrystalline silicon films show a similar variation, while the inflection point in the spectrum is determined by the silane concentration. The change rule can be reasonably explained by the micro-theory of the corresponding film growth.