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本文提出的拟合法是以光响应作为αW和αL_p的函数,在知道α的情况下,拟合曲线求得L_p值.结合外推法,反过来校正α值,似可以补充外推法的不足和得出较正确的L_p值.我们分别采用拟合和外推两种方法测定扩散长度L_p,已测得的各种半导体材料扩散长度分别为GaP(N_D=3.9 × 10~(19)cm~(-3))L_p= 0.036μm,GaAs(N_D=7 ×10~(17)cm~(-3))L_p=0.8μm,GaAlA_s(N_D=8 ×10~(16)cm~(-3))L_p=0.1μm.
The fitting method proposed in this paper is based on the light response as a function of αW and αL_p, knowing the case of α, fitting the curve to obtain the value of L_p. Combining the extrapolation, the α value is in turn corrected, And obtain the more correct value of L_p.We measured the diffusion length L_p by fitting and extrapolation respectively, and the diffusion lengths of the various semiconductor materials measured were GaP (N_D = 3.9 × 10 ~ (19) cm ~ (-3) L_p = 0.036μm, GaAs (N_D = 7 × 10-17 cm -3) L_p = 0.8μm and GaAlA_s (N_D = 8 × 10-16 cm -3) ) L_p = 0.1 μm.