We have investigated the transient characteristics of discrete Raman Amplifiers and found that the response time caused by gain saturation is dependent upon th
Sb-doped silica EDF showed an opposite temperature dependent gain profile compared to Al-doped silica EDF. Concatenation of those two EDFs showed a gain variat
We have demonstrated that the AGC signals generated in a master EDFA can be used to drive a slave EDFA, thus to make the slave EDFA work in AGC mode without it