除去干刻或高剂量等离子注入后的光刻胶 ,一般是采用化学溶剂和酸类等湿刻法 ,以前有时采用干燥氧的等离子灰化法。然而成本高 ,具有危险性和污染性的化学湿刻法直接造成了环境污染 ,使得全球气候变暖 ,能源的大量消耗 ,地下水受到污染等等。一种新的干式去胶并且处理后可用去离子水 DI清洗残留物的工艺方法 (ENVIRO)已经在半导体芯片厂被成功地使用了 12个多月。对于产量 10 0 0 0片 /周的芯片厂 ,相对于化学湿刻法一年可以节省 5百万美元溶剂消耗 Removal of dry etching or high-dose plasma after the injection of photoresist, the general use of chemical solvents and acids such as wet etching method, the previous dry oxygen sometimes used plasma ashing method. However, chemical wet etching, which is costly, dangerous and polluting, has directly caused environmental pollution, resulting in global warming, massive energy consumption, groundwater contamination, and the like. A new dry de-gluing and post-processing process for decontaminated DI cleaning residues (ENVIRO) has been successfully used in semiconductor fabs for more than 12 months. For chip fabs producing 10 000 wafers / week, it saves $ 5 million solvent consumption per year compared to chemical wet etching