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碲镉汞晶片材料参数评价吴人齐（华北光电技术研究所北京１０００１５）本文讨论了ＨｇＣｄＴｅ晶片材料的几种常规测量方法，认为可用红外透射法测ＨｇＣｄＴｅ组分ｘ值。该测试方法是非破坏性的，不需要做标准样品，而是根据碲镉汞晶片室温透射谱吸收边微商最大值对应的...
Evaluation of Parameters for HgCdTe Wafer Materials Wu Renqi (North China Institute of Optoelectronic Technology, Beijing 100015) Several conventional measurement methods of HgCdTe wafer materials are discussed in this paper. The x value of HgCdTe component can be measured by infrared transmission method. The test method is non-destructive, do not need to be a standard sample, but according to the mercury vapor-permeable mercury HgCd absorption edge of the maximum value of the corresponding derivative ...