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采用ZrW2O8陶瓷靶材,以射频磁控溅射法在单晶硅基片上沉积制备了ZrW2O8薄膜。用X射线衍射仪和热膨胀仪分析了靶材的成分和热膨胀性能;用X射线光电子能谱仪和扫描电子显微镜分析了薄膜的组分及其表面形貌;用表面粗糙轮廓仪和薄膜应力分布测试仪测量了薄膜的厚度和应力。实验结果表明:制备的ZrW2O8靶材纯度高且具有良好的负热膨胀性能,磁控溅射沉积制备的ZrW2O8薄膜和靶材保持良好的化学成分一致性,且表面平滑、致密,在750℃热处理3 min后薄膜表面晶粒明显长大,并出现孔洞缺陷;衬底未加热时沉积制备的ZrW2O8薄膜选区应力差最小,应力分布最均匀,随着热处理温度和衬底温度的提高,由于薄膜和衬底的热膨胀系数的差异较大,薄膜选区内的应力差增加,薄膜应力分布不均性增大。
A ZrW2O8 thin film was deposited on a monocrystalline silicon substrate by RF magnetron sputtering using a ZrW2O8 ceramic target. The composition and thermal expansion properties of the target were analyzed by X-ray diffraction and thermal dilatometer. The composition and surface morphology of the film were analyzed by X-ray photoelectron spectroscopy and scanning electron microscopy. The surface roughness profile and the stress distribution The tester measures the thickness and stress of the film. The experimental results show that the prepared ZrW2O8 target has high purity and good negative thermal expansion. The ZrW2O8 thin films and targets prepared by magnetron sputtering deposition have good chemical composition and the surface is smooth and dense. After heat treatment at 750 ℃ for 3 min, the grains on the surface of the film grow up obviously, and the hole defects appear. When the substrate is not heated, the stress difference of the ZrW2O8 film is the smallest and the stress distribution is the most uniform. With the increase of the heat treatment temperature and the substrate temperature, The difference of the coefficient of thermal expansion at the bottom is larger, the stress difference in the film selection area increases, and the stress distribution in the film increases.