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采用水热法将硝酸铜(Cu(NO3)2),硝酸铟(In(NO3)3),硫脲(CH4N2S)混合作为前驱体,在160℃的温度下加热反应3h得到CuInS2颗粒,然后用旋转涂膜的方法得到CuInS2薄膜。利用扫描电子显微镜(SEM)、X-射线能谱仪(EDS)、X-射线衍射仪(XRD)、透射电子显微镜(TEM)、原子力显微镜(AFM)、紫外-可见光分光光度计(UV-Vis)对薄膜进行表征。结果表明,制备的CuInS2薄膜高质量结晶、颗粒均匀、表面平整致密,呈黄铜矿结构,与基底附着性较好。组分接近化学计量比,沿(112)面择优取向生长,另外CuInS2薄膜禁带宽度为1.40eV左右,具有高的吸收系数,适合于制备CIS太阳能电池吸收层。
CuInS2 particles were obtained by hydrothermal reaction of copper nitrate (Cu (NO3) 2), In (NO3) 3 and thiourea (CH4N2S) as precursors at 160 ℃ for 3h. Spin coating method to obtain CuInS2 film. The microstructure and mechanical properties were characterized by scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) The films were characterized. The results show that the prepared CuInS2 thin films have high quality, uniform crystal grains, dense and smooth surface, chalcopyrite structure and good adhesion to the substrate. The composition is close to the stoichiometric ratio and grows preferentially along the (112) surface. In addition, the band gap of CuInS2 thin film is about 1.40eV, which has a high absorption coefficient and is suitable for preparation of CIS solar cell absorber.