论文部分内容阅读
最近我们用高分辨电镜方法研究了750℃50—100h退火后直拉硅单晶中的氧沉淀。选择750℃退火的原因有二:①大规模集成电路工艺正在开发以氧沉淀及其诱生的位错、层错吸收有害杂质的新技术,为了提高氧沉淀速率,常在750℃附近的温度对硅片进行预先热处理。②文献报道,750℃附
Recently we used high resolution electron microscopy to study the oxygen precipitation in Czochralski silicon after 750-100 ° C annealing for 50-100 h. There are two reasons for choosing 750 ° C annealing: (1) Large-scale integrated circuit (IC) technology is developing a new technology that uses oxygen precipitation and its induced dislocations and layer faults to absorb harmful impurities. In order to improve the oxygen precipitation rate, the temperature near 750 ° C The wafer is pre-heat treated. ② reported in the literature, 750 ℃ attached