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利用卤化物还原原理,以Ti粉和I2粉为反应原料,通过化学气相沉积的方法在Al2O3陶瓷基体上制备了金属Ti涂层。考察了原料配比、加热温度及保温时间等工艺参数对涂层沉积的影响。通过X射线衍射仪分析了涂层的物相组成。利用扫描电子显微镜及能谱仪对涂层的微观组织形貌及成分进行了分析。采用座滴法考察铜与沉积了涂层的氧化铝陶瓷间的润湿性。研究结果表明,化学气相沉积法在氧化铝陶瓷表面制备Ti涂层的适宜工艺参数为:Ti与I2的质量比=1∶3,沉积温度为1 100℃,沉积时间为60min。所获得的Ti涂层纯度较高,具有明显的(110)晶面择优取向性,涂层与陶瓷结合良好。铜与涂层间的润湿角在1 113℃时为57°。
Using the principle of halide reduction, Ti powder and I2 powder were used as raw materials to prepare metal Ti coating on Al2O3 ceramic substrate by chemical vapor deposition. The influence of raw material ratio, heating temperature and holding time on the deposition of coating was investigated. The phase composition of the coating was analyzed by X-ray diffractometer. The microstructure and composition of the coatings were analyzed by scanning electron microscopy and energy dispersive spectroscopy. The droplet method was used to investigate the wettability between copper and the deposited alumina ceramic. The results show that the suitable process parameters of Ti coating on alumina ceramic surface by chemical vapor deposition are as follows: the mass ratio of Ti to I2 is 1: 3, the deposition temperature is 1 100 ℃ and the deposition time is 60 min. The obtained Ti coating has higher purity, obvious preferential orientation of (110) crystal plane and good combination of coating and ceramic. The wetting angle between copper and coating is 57 ° at 1 113 ° C.