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基于热力学平衡理论 ,对在电子回旋共振等离子体增强金属有机化学气相沉积系统中的 Ga N薄膜生长给出了一个化学平衡模型 .计算表明 ,Ga N生长的驱动力 Δp是以下生长条件的函数 : 族输入分压 ,输入 / 比 ,生长温度 .计算了六方和立方 Ga N的生长相图 ,计算结果和我们的实验结果显示出一定的一致性 .通过分析 ,解释了高温和高 / 比生长条件适合六方 Ga N的原因 .上述模型可以延伸到用于 Ga N单晶薄膜生长的类似系统中 .
Based on the theory of thermodynamic equilibrium, a chemical equilibrium model is proposed for GaN thin film growth in electron cyclotron resonance plasma enhanced metal-organic chemical vapor deposition system. The calculation shows that the driving force of GaN growth is a function of the following growth conditions: Family input partial pressure, input / ratio, growth temperature.The phase diagrams of hexagonal and cubic Ga N were calculated and the calculated results showed some consistency with our experimental results.According to the analysis, the conditions of high temperature and high / specific growth The reason for the hexagonal Ga N is that the above model can be extended to similar systems for the growth of GaN single crystal thin films.