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对ＭｏｖｅＭａｇ阴极（旨在提高靶利用率）叠加ＲＦ的ＤＣ磁控溅射方法所淀积的低电阻率ＩＴＯ膜的结果进行了讨论。实验是在一个串级溅射系统ＡＲＩＳＴＯ５００Ｓ上进行的，可用基片面积高达５７０×１３５０ｍｍ２，在基片温度２００℃及靶利用率高于４０％的条件下，在玻璃（浮法玻璃）上得到电阻率小于１５０μΩｃｍ的ＩＴＯ薄膜。
The results for a low-resistivity ITO film deposited by a DC Magnetron Sputtering method of stacking a MoveMag cathode (designed to increase target utilization) with RF are discussed. Experiments were performed on a cascade sputtering system ARISTO500S available on glass (float glass) using a substrate area of up to 570 x 1350 mm2 at a substrate temperature of 200 ° C and a target utilization above 40% ITO film having a resistivity of less than 150 μΩcm.