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Si-rich SiO_x and amorphous Si clusters embedded in SiO_x films were prepared by the radio-frequency magnetron cosputtering method and high-temperature annealing treatment.The threshold resistance switching behavior was achieved from the memory mode by continuous bias sweeping in all films,which was caused by the formation of clusters due to the local overheating under a large electric field.Besides,the Ⅰ-Ⅴ characteristics of the threshold switching showed a dependence on the annealing temperature and the SiO_x thickness.In particular,formation and rupture of conduction paths is considered to be the switching mechanism for the 39 nm-SiO_x film,while for the 78 nm-SiO_x film,adjusting of the Schottky barrier height between insulator and semiconductor is more reasonable.This study demonstrates the importance of investigation of both switching modes in resistance random access memory.
Si-rich SiO x and amorphous Si clusters embedded in SiO x films were prepared by the radio-frequency magnetron cosputtering method and high-temperature annealing treatment. The threshold resistance switching behavior was achieved from the memory mode by continuous bias sweeping in all films, which was caused by the formation of clusters due to the local overheating under a large electric field.Besides, the I-Ⅴ characteristics of the threshold switching showed a dependence on the annealing temperature and the SiO_x thickness.In particular, formation and rupture of conduction paths is considered to be the switching mechanism for the 39 nm-SiO_x film, while for the 78 nm-SiO_x film, adjusting of the Schottky barrier height between insulator and semiconductor is more reasonable. This study demonstrates the importance of investigation of both switching modes in resistance random access memory.