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本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型.根据双极传输理论,考虑电导调制效应、闭锁效应、反向注入及电流的多维效应,导出一种漂移宽基区双极—MOS器件的电路网络模型.首次将此模型直接嵌入SPICE3A.7中.计算CLIGBT在不同栅压和横向电阻下的静态闭锁特性及在不同漂移区长度和不同PMOS宽长比下的瞬态闭锁特性.由此可解决含有CL-lGBT等BIMOS类器件的高压集成电路HVIC的设计问题.
In this paper, a network model of complementary lateral insulated gate bipolar transistor CLIGBT is proposed. According to the bipolar transmission theory, considering the multi-dimensional effect of conductance modulation, blocking effect, reverse injection and current, a drift wide base bipolar-MOS The circuit model of the device is first embedded in SPICE3A.7.The CLIGBT static latching characteristics under different gate voltage and lateral resistance and the transient blocking characteristics under different drift length and different PMOS width-length ratio are calculated. This can solve the design problem of the HVIC of a high-voltage integrated circuit including a BIMOS device such as CL-IGBT.