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本文根据基区扩展效应,以集电区N~-层掺杂浓利和厚利为因素,导出晶体管扩展基区宽度的数学表达式。这些数学表达式说明晶体管集电区N~-层掺杂浓度和厚度明显地影响正偏二次击穿耐量,并且对正偏二次击穿耐量随电压变化的现象能进行更本质地解释。同时也从基区扩展效应的角度讨论了基区宽度和掺杂浓度对正偏二次击穿的影响。
In this paper, according to the extension effect of base area, the mathematical expression of the base width of transistor extension is deduced by the factors of concentration and thickness doping of N ~ - layers in collector area. These mathematical expressions show that the N ~ - doping concentrations and thicknesses of the transistor collector significantly affect the forward biased secondary breakdown resistance and can explain the phenomenon that the forward biased secondary breakdown resistance changes with voltage more fundamentally. At the same time, the influence of base width and doping concentration on the forward biased breakdown is discussed from the viewpoint of base extension effect.