论文部分内容阅读
日本电子技术研究所利用控制半导体原子层的形成生长单晶硅技术首次获得成功。这对于引入注目的超晶格半导体器件及光电集成电路等新型电子器件的发展,有可能起到推进作用。
For the first time, the Japan Institute of Electronics Technology succeeded for the first time in utilizing single crystal silicon technology to control the formation of semiconductor atomic layers. This is likely to play a catalytic role in the development of new electronic devices such as superlattice semiconductor devices and optoelectronic integrated circuits that attract attention.