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采用二乙基锌(DEZn)和水( H2O)作为生长源,利用金属有机化学气相沉积( MOCVD)的方法,在100 ～400℃低温范围内,在GaAs (001)衬底上制备了ZnO薄膜.利用X射线衍射(XRD) ,室温PL,AFM,SEM研究了薄膜的晶体结构特性、发光特性及表面形貌特性.XRD分析表明ZnO薄膜具有很强的c轴取向,(002)峰的FWHM平均值为0.3°.当生长温度达到400℃时从SEM测量结果可以观察到薄膜表面呈六角状结晶.随着生长温度的升高,薄膜的晶粒尺寸变大,结晶质量得到提高但同时表面变粗糙.室温PL测量显示薄膜在370nm附近有强的近带边发射,没有观测到深能级发射峰.
A ZnO thin film was deposited on a GaAs (001) substrate by metalorganic chemical vapor deposition (MOCVD) using diethylzinc (DEZn) and water (H2O) as growth sources. The crystal structure, luminescent properties and surface topography of the films were characterized by X-ray diffraction (XRD), PL, AFM and SEM at room temperature.XRD analysis showed that the ZnO films have strong c-axis orientation and (002) The average value was 0.3 °. When the growth temperature reached 400 ° C, the hexagonal crystal was observed on the surface of the film from the SEM measurement. As the growth temperature increased, the crystal grain size of the film became larger and the crystal quality was improved, Roughening.The PL measurement at room temperature showed strong near-band edge emission near 370 nm and no deep level emission peak was observed.