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从理论与实验两方面研究了ＧａＡｓ定向耦合型行波光调制器。首次报导了重掺杂ｎ＋型薄层对电场分量相当于导体，对磁场分量相当于绝缘体这一发现；首次提出了一种具有对称宽电极的新型结构，并研制成功开关电压为８．５Ｖ，微波折射率约为３．６，在３０ＧＨｚ情况下传输损耗小于１０ｄＢ／ｃｍ，根据ｓ参数测试３ｄＢ带宽达到３２ＧＨｚ的行波调制器。
The GaAs directional coupler type traveling-wave optical modulator is studied theoretically and experimentally. For the first time, it was reported that the electric field component of the heavily doped n + type thin film is equal to the conductor and the magnetic field component is equivalent to the insulator. For the first time, a novel structure with a symmetrical wide electrode was proposed and a switching voltage of 8.5V was successfully developed. The microwave index of refraction is about 3.6, the transmission loss is less than 10dB / cm at 30GHz, and the 3dB bandwidth reaches 32GHz based on the s-parameter.