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在可商业获得的 N型 6 H - Si C晶片上 ,通过化学气相淀积 ,进行同质外延生长 ,在此结构材料上 ,通过热蒸发 ,制作 Ni/6 H- Si C肖特基势垒二极管 .测量并分析了肖特基二极管的电学特性 ,结果表明 ,肖特基二极管具有较好的整流特性 :反向击穿电压约为 45 0 V,室温下 ,反向电压 VR=- 2 0 0 V时 ,反向漏电流 JL=5× 10 - 4 A· cm- 2 ;理想因子为 1.0 9,肖特基势垒高度为 1.2 4— 1.2 6 e V ,开启电压约为 0 .8V
Homogeneous epitaxial growth was performed by chemical vapor deposition on a commercially available N-type 6 H-Si C wafer, on which a Ni / 6 H-Si C Schottky barrier was fabricated by thermal evaporation Diode.The electrical characteristics of the Schottky diode were measured and analyzed. The results show that the Schottky diode has good rectification characteristics: the reverse breakdown voltage is about 45 0 V, and the reverse voltage VR = -20 at room temperature The reverse leakage current JL is 5 × 10 -4 A · cm -2 at 0 V, the ideal factor is 1.0 9, the Schottky barrier height is 1.2 4 - 1.2 6 eV, and the turn-on voltage is about 0.8V