NEC公司采用0．2μm电子束曝光技术已制成0．375μm2单元面积1GbDRAM用的存储单元。新存储单元，由于把通过存储单元内的位线作成斜形状，用在IGbDRA负中存储单元面积的“斜位线结构”和“担氧化膜”的低温工艺技术来实现的。斜位线结构，在开位线结构中把通过存储单元内的位线 NEC Corporation 0.2μm electron beam exposure technology has been made 0.375μm2 cell area 1GbDRAM memory cells. The new memory cell is realized by a low-temperature process technology of “diagonal bit line structure” and “oxide film” for storing the cell area in the negative of IGbDRA since the bit line passing through the memory cell is obliquely formed. An oblique bit line structure that passes bit lines within a memory cell in an open bit line configuration