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InP vertical porous arrays were produced using electrochemical etching at room temperature.The as-etched InP samples were annealed in an ultra high vacuum camber.Cross-sectional analysis of the porous layer was conducted using scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX).Annealing in vacuum was found to meliorate the structural quality of the porous layer.EDX results showed the composition change of the porous InP.By controlling the annealing process parameters,the content ratio of phosphorus (P) to indium (In) is tuneable.Raman property of the samples was also investigated at room temperature.Compared with the sample without annealing treatment,Raman spectrum from the annealed sample showed red-shifted LO and TO peaks together with sharpened LO peak and shortened TO peak.
InP vertical porous arrays were produced using electrochemical etching at room temperature. The as-etched InP samples were annealed in an ultra high vacuum camber. Cross-sectional analysis of the porous layer was conducted using scanning electron microscopy (SEM) and energy dispersive X- ray spectroscopy (EDX). Annealing in vacuum was found to meliorate the structural quality of the porous layer. EDX results showed the composition change of the porous InP.By controlling the annealing process parameters, the content ratio of phosphorus (P) to indium Raman spectrum from the annealed sample showed red-shifted LO and TO peaks together with sharpened LO peak and shortened TO peak.