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针对影响激光诱导击穿光谱(LIBS)定量分析精度的自吸收效应,发展了新型的光学薄激光诱导击穿光谱(OT-LIBS)技术,通过匹配等离子体光谱中元素双线强度比与理论值来设置曝光延时,从而直接由实验装置获得无自吸收的元素发射谱线,不仅避免了建模校正的误差,且未额外增加设备.通过对比Boltzmann平面的线性相关度以及自吸收(SA)系数,验证了OT-LIBS能够诱导产生光学薄等离子体.与传统的自吸收效应校正方法相比,OT-LIBS所获Boltzmann平面的线性相关度达到0.99,而且SA系数达到最大值,证明自吸收效应最小.单变量定标的定量分析结果表明,相比于传统LIBS,OT-LIBS将Al元素定标线的线性相关度由0.86提高至0.98,平均绝对测量误差由1.2%降低至0.13%,检测精度提高了一个量级.探讨了OT-LIBS的边界条件、适用性和局限性,该技术对Al元素含量和脉冲激光能量的限定范围分别为0–20.8%和大于16.9?mJ,对Al元素含量和脉冲激光能量的可适用范围分别为0–15.9%和大于33.1?mJ.本技术有助于进一步推动LIBS的工业化应用步伐.
A new type of optical thin-film laser-induced breakdown spectroscopy (OT-LIBS) has been developed for the self-absorption effect that affects the quantitative analysis accuracy of laser-induced breakdown spectroscopy (LIBS). By matching the intensity ratio of element double line in the plasma spectrum with the theoretical value To set the exposure delay so as to obtain the element emission spectrum without self-absorption directly from the experimental device, which not only avoids the modeling error but also does not add additional equipment.By comparing the linear correlation of Boltzmann’s plane and the self-absorption (SA) Coefficient to verify that OT-LIBS can induce optical thin plasma.Compared with the traditional self-absorption effect correction method, the linear correlation of the Boltzmann plane obtained by OT-LIBS reaches 0.99 and the SA coefficient reaches the maximum, which proves that self-absorption The results of the quantitative analysis of univariate calibration showed that compared with the traditional LIBS, OT-LIBS increased the linear correlation of Al element calibration line from 0.86 to 0.98 and the average absolute measurement error decreased from 1.2% to 0.13% The detection accuracy is improved by one order of magnitude.The boundary conditions, applicability and limitations of OT-LIBS are discussed. The limits of Al content and pulsed laser energy are 0-20.8% and To 16.9? MJ, the applicable range of the Al element content and pulsed laser energy were 0-15.9% and greater than 33.1? MJ. This technology helps to further promote the pace of LIBS industrial applications.