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运用干－湿－干高温热氧化工艺，在4种不同掺杂类型的单晶硅基片上，制备成功非晶态SiO2薄膜驻极体。恒栅压电晕充电、等温表面电位衰减及热刺激放电（TSD）实验表明，不同类型基片的SiO2薄膜其电荷动态特性差异较大，基片的掺杂成份和掺杂浓度直接影响其上二氧化硅驻极体的性能，电荷储存稳定性随着掺杂浓度的增大而有所下降，TSD放电电流峰的形状与位置也会随着掺杂成份和浓度的变化而改变。分析表明，造成这一现象的原因在于：掺杂成份在热氧化时通过扩散从基片进入SiO2薄膜，改变了其内部微观网络结构，进而影响其电荷贮存特性。这一点为进一步探索SiO2薄膜驻极体的电荷贮存机制提供了有益的启示。
Using dry-wet-dry high-temperature thermal oxidation process, successful amorphous SiO2 thin film electrets were prepared on four kinds of single-crystal silicon substrates with different doping types. Constant gate voltage corona charging, isothermal surface potential decay and thermal stimulation discharge (TSD) experiments show that the different types of substrate SiO2 film dynamic characteristics of the charge difference is larger, the substrate doping content and doping concentration directly affect the The performance and charge storage stability of the silica electret decreased with the doping concentration increasing. The shape and location of the peak of TSD discharge current also changed with the doping content and concentration. The analysis shows that the reason for this phenomenon is that the doping component diffuses into the SiO2 film from the substrate during the thermal oxidation and changes its internal microscopic network structure, thereby affecting its charge storage characteristics. This provides a useful inspiration for further exploration of the charge storage mechanism of SiO2 thin film electrets.