论文部分内容阅读
在等离子体增强化学气相沉积(PECVD)系统中,通过控制进入反应室的气体种类逐层沉积非晶SiCx∶H(a SiCx∶H)和非晶Si∶H(a Si∶H)薄膜,然后经过高温热退火处理,成功制备了晶化纳米a SiCx∶H/nc Si∶H(多晶SiC和纳米Si)多层薄膜。利用截面透射电子显微镜技术分析了a SiCx∶H/nc Si∶H多层薄膜的结构特性。通过对晶化样品的时间分辨光致发光谱的研究,结果表明:随着退火温度的升高,发光峰位置开始出现一些红移现象;当退火温度为900℃时,样品的发光强度和发光衰减时间分别达到最大值和最小值;随着退火温度的继续升高,发光峰位置又开始出现蓝移现象。由此探讨纳米a SiCx∶H/nc Si∶H多层薄膜的发光特性和发光机理。
In a plasma enhanced chemical vapor deposition (PECVD) system, amorphous SiCx: H (a SiCx: H) and amorphous Si: H (aSi: H) thin films are deposited layer by layer by controlling the type of gas entering the reaction chamber, After annealing at high temperature, a series of multi-layered thin films of crystallized nano-a SiCx:H / nc Si:H (polycrystalline SiC and nano-Si) were successfully prepared. The structural characteristics of a SiCx: H / nc Si:H multilayers were analyzed by cross-section transmission electron microscopy. The results of the time-resolved photoluminescence spectra of the crystallized samples show that some redshift phenomena begin to occur as the annealing temperature increases. When the annealing temperature is 900 ℃, the luminescence intensity and luminescence The decay time reaches the maximum and the minimum, respectively. As the annealing temperature continues to increase, the emission peak begins to blue shift again. Thus, the luminescent properties and luminescence mechanism of nanocrystalline a SiCx:H / nc Si:H multilayer films were investigated.