报道了正向栅控二极管 R- G电流法表征 F- N电应力诱生的 SOI- MOSFET界面陷阱的实验及其结果 .通过体接触的方式实现了实验要求的 SOI- MOSFET栅控二极管结构 .对于逐渐上升的累积应力时间 ,测量的栅控二极管电流显示出明显增加的 R- G电流峰值 .根据 SRH理论的相关公式 ,抽取出来的诱生界面陷阱密度是随累积应力时间的上升而呈幂指数的方式增加 ,指数为 0 .4.这一实验结果与文献先前报道的基本一致 This paper reports the experiment and results of the positive grid-tied diode R-G current method for characterizing F-N electrical stress-induced SOI-MOSFET interface traps and the SOI-MOSFET gated diode structure required by the experiment. For the rising cumulative stress time, the measured gated diode current shows a significantly increased R-G current peak.According to the correlation formula of SRH theory, the trap induced interface trap density is exponentially increasing as the cumulative stress time increases The index approach increased with an index of 0.4. The experimental results are consistent with those previously reported in the literature