一、引言等离子淀积的SiN被用来作为集成电路的钝化膜。通常用傅立叶变换红外光谱学来表征SiN膜的性质。本文中,我们叙述了从SiN的一个FT-IR光谱中能够得到的数据。给出了红外测量与SiN其它物理性质之间的关系。二、SiN的测量方法采用标准的工业上通用的具有数据处理和光谱存贮用的活动磁盘和坚固的磁盘座的FT-IR光谱仪来得到具有四波数分辨率的SiN膜的转换光谱。SiN淀积在两面抛光的(100)晶面 I. INTRODUCTION Plasma deposited SiN is used as a passivation film for integrated circuits. The properties of SiN films are usually characterized by Fourier transform infrared spectroscopy. In this article, we describe the data available from an FT-IR spectrum of SiN. The relationship between infrared measurements and other physical properties of SiN is given. SiN Measurement Methods The conversion spectra of SiN films with four wave number resolution were obtained using a standard commercially available FT-IR spectrometer with active disks for data processing and spectral storage and robust disk holders. SiN is deposited on both sides of polished (100) crystal plane