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The diffusion of impurities in a p-i-n solar cell is one of causes for the degradation of energy conversion efficiency. However, few reports on the study of the illumination dependence of the boron diffusion in B-doped a-SiC:H/a-Si:H heterojunction have been seen so far. In this work, the B depth profiles in B-doped a-SiC:H/a-Si:H hetero junctions after illumination and annealing have been measured by nuclear reaction analysis; from the change of B profiles, we estimate the diffusion coefficient of B in a-Si:H.Diffusion of electrically activated B atoms is investigated and a simple discussion for the results obtained is presented as well.
However, few reports on the study of the illumination dependence of the boron diffusion in B-doped a-SiC: H / a-Si: H heterojunction have been seen so far. In this work, the B depth profiles in B-doped a-SiC: H / a-Si: H hetero junctions after illumination and annealing have been measured by nuclear reaction analysis; from the change of B profiles, we estimate the diffusion coefficient of B in a-Si: H. Diffusion of electrically activated B atoms is investigated and a simple discussion for the results obtained was presented as well.