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基于不断发展的系统级封装技术,提出了一种用于芯片间高速互连的新型可集成的物理器件:硅基毫米波介质填充波导。文中阐述了该器件的物理原理,采用建模、仿真相结合的方法对该模块进行了结构设计,利用新的设计思路结合半导体工艺解决了毫米波互连结构内部的反射、电压驻波比(VSWR)、信号耦合、准TEM-TE-准TEM转换传输问题以及毫米波互连结构阵列中信号泄露的问题,并利用半导体与MEMS加工工艺加以实现。测试结果表明宽度为680μm的单通道矩形波导,-10 d B带宽为9.8 GHz,相对带宽为12.56%;传输损耗为1 d B/cm,工作频带内相邻波导之间串扰低于-40 d B,可以形成大阵列并进行集成,从而实现芯片间数据的并行传输。
Based on evolving system-in-package technology, a new type of integrated physical device for high-speed interchip interconnect is proposed: a silicon-based millimeter-wave dielectric filled waveguide. In this paper, the physical principle of the device is described. The design of the module is carried out by the combination of modeling and simulation. The new design idea and the semiconductor technology are used to solve the reflection and voltage standing wave ratio VSWR), signal coupling, quasi-TEM-TE-quasi-TEM conversion, and signal leakage in an array of millimeter-wave structures, and is implemented using semiconductors and MEMS processing techniques. The results show that the single-channel rectangular waveguide with a width of 680μm has a -10 dB bandwidth of 9.8 GHz and a relative bandwidth of 12.56%. The transmission loss is 1 d B / cm. The crosstalk between adjacent waveguides in the operating band is less than -40 d B, can form a large array and integration, in order to achieve parallel data transfer between the chip.