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报道了用低压金属有机化学汽相淀积(LP-MOCVD)技术在(100)InP衬底上生长InGaAsP体材料及InGaAsP(1.3μm)/InGaAsP(1.6μm)量子阱结构的生长条件和实验结果。比较了550℃和580℃两个生长温度下In1-xGaxAsyP1-y体材料及相应量子阱结构的特性,表明在580℃生长条件下,晶体具有更好的质量和特性。
The growth conditions of InGaAsP bulk materials and InGaAsP (1.3μm) / InGaAsP (1.6μm) quantum well structures grown on (100) InP substrate by low pressure metalorganic chemical vapor deposition (LP-MOCVD) Experimental results. The characteristics of the In1-xGaxAsyP1-y bulk material and the corresponding quantum well structure at 550 ° C and 580 ° C are compared, indicating that the crystals have better quality and characteristics at 580 ° C growth.