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本文重点介绍采用X射线衍射分析法对碲镉汞单晶片在经受研磨和抛光过程中所进行的跟踪分析,只经研磨的晶片的X射线衍射图上2θ从20°到90°的范围内,有(111)、(220)、(311)、(420)……等晶面的衍射峰出现,实属多晶衍射谱,将晶片抛光后,其衍射峰数目急剧下降。一般只剩下一个衍射峰,有的为(111),有的为(220),或(420)等不一。表明经抛光后的晶片为单晶片。对一定数量的晶片反复经研磨—衍射分析—抛光—衍射分析,其衍射谱也就多峰-单峰交替出现。实验过程中还发现大部分晶片在经受研磨后的衍射谱中,(110)面的二级衍射,即(220)峰出现强化的几率最大。此现象表明研磨能导致择优取向,出现形变织构。本文从X射线衍射原理和晶体范性形变的X射线研究出发,结合碲镉汞晶体的结构特征和所具有的滑移特点,对晶体的多晶化和形变织构的形成机理进行了初步探讨。
This article focuses on the X-ray diffraction analysis of HgCdTe wafers subjected to grinding and polishing process tracking analysis carried out only on the X-ray diffraction pattern of the polished wafer 2θ from 20 ° to 90 ° range, There are (111), (220), (311), (420) ... ... and other crystal plane diffraction peaks appear, it is polycrystalline diffraction spectrum, the wafer polished, the sharp decline in the number of diffraction peaks. Generally only one diffraction peak left, some (111), some (220), or (420) and so on. The polished wafer is a single wafer. Repeated grinding - diffraction analysis - polishing - diffraction analysis of a certain number of wafers, the diffraction spectrum also multi-peak - single peak alternately. During the experiment, it was also found that the diffraction of the (110) plane in the diffraction spectrum of most of the wafers after grinding was the highest, with the (220) peak showing the greatest enhancement. This phenomenon shows that grinding can lead to preferred orientation, deformation texture appears. Based on the X-ray diffraction of X-ray diffraction theory and X-ray diffraction of crystal, the mechanism of polycrystallization and deformation texture of crystal is discussed based on the structural characteristics and sliding characteristics of HgCdTe .