在大规模集成电路和半导体材料的研制工艺过程中,对所使用的化学试剂的纯度的控制,非常重要。水和试剂中的某些杂质元素的沾污往往给材料和器件的质量带来有害的影响,故必须对水和试剂的质量加以严格控制。MOS级试剂的杂质含量一般都是10~(-5)～10~(-7)％,因此需要选定灵敏度高的分析方法检测其中的痕量杂质。本实验室选用了三种方法来分析几种试剂。 It is important to control the purity of the chemicals used in the development of large scale integrated circuits and semiconductor materials. Contamination of water and some of the impurity elements in the reagent often has a detrimental effect on the quality of the material and the device, so the quality of the water and reagents must be carefully controlled. MOS reagent reagent impurity content is generally 10 ~ (-5) ~ 10 ~ (-7)%, so you need to select the high sensitivity of the detection method to detect trace impurities. Three methods are used in this lab to analyze several reagents.