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MOS 场效应晶体管是一种高集成度低功耗器件,以前主要作为数字 MOS 集成电路、大规模集成电路的构成元件而得到发展。由于这种原因,其研究重点主要集中在高集成度、低功耗和高速上。至于高耐压、大功率等方面就没有那样充分地研究。MOS 场效应管其本身的性能上的主要特点是具有高输入阻抗、平方律特性、电流的负温度系数。这些特点应用于 MOSFET 模拟电路能得到更充分发挥.应用于模拟电路的情况下,在降低 MOS 场效应管特有的阈值电压的误差和低频噪声的同时,实现 MOS场效应管的高耐压化、大功率化也是主要的课题。
MOS field-effect transistor is a highly integrated low-power devices, previously mainly as digital MOS integrated circuits, components of large-scale integrated circuits and development. Due to this reason, its research focuses mainly on high integration, low power consumption and high speed. As for high voltage, high power and so on there is not as fully studied. MOS FET’s main features of its own performance is the high input impedance, square law characteristics, the current negative temperature coefficient. These characteristics can be applied to the MOSFET analog circuit can be more fully used in the case of analog circuits, MOS FET in reducing the unique threshold voltage error and low-frequency noise at the same time, to achieve MOS FET high voltage, High-power is also a major issue.