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首次报道了利用相分凝技术在非晶石英衬底上立方ZnMgO基体中制备六方ZnO量子点的化学溶液方法。对所制备的ZnO/ZnMgO/SiO2进行了原子力显微镜(AFM)、X射线衍射(XRD)、光致发光(PL)、椭圆偏振光谱(SE)表征。XRD表征表明当六配位Zn2+以替位的形式取代六配位Mg2+时,会导致相同衍射条件下立方ZnMgO的2θ比立方MgO的2θ小。SE表征发现ZnO量子点的量子效应导致了ZnO量子点的激子吸收能(3.76eV)比ZnO体晶的能带隙(3.37eV)大。AFM表征表明:导致薄膜的XRD的衍射峰、α吸收峰和PL发射峰皆很宽的部分原因是由于组成所制备薄膜的晶粒尺寸分散较大、形状不一引起的。
For the first time, a chemical solution method for preparing hexagonal ZnO quantum dots in a cubic ZnMgO matrix on an amorphous quartz substrate was reported for the first time. The prepared ZnO / ZnMgO / SiO2 was characterized by AFM, XRD, PL and SE. XRD results indicated that when the six-coordinate Zn2 + substituted hexa-coordinate Mg2 + in the form of substitutional sites, the 2θ of the cubic ZnMgO under the same diffraction condition was smaller than the 2θ of the cubic MgO. SE characterization revealed that the quantum effect of ZnO quantum dots resulted in the exciton absorption energy (3.76eV) of ZnO quantum dots larger than that of ZnO bulk crystal (3.37eV). AFM characterization showed that the XRD diffraction peak, the α absorption peak and the PL emission peak of the films were all attributed to the large dispersion of the grain size and the different shapes of the films.