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用国产ＭＢＥ设备生长出与ＩｎＰ衬底晶格匹配的ＩｎＧａＡｓ／ＩｎＡｌＡｓ多量子阱材料，并对材料的量子限制Ｓｔａｒｋ效应及其与光偏振方向有关的各向异性电吸收特性进行研究．用该种材料制作的脊波导结构电吸收调制器在２．４Ｖ驱动电压下实现了２０ｄＢ以上消光比，光３ｄＢ带宽达３ＧＨｚ
InGaAs / InAlAs MQWs lattice matched with InP substrate were grown by domestic MBE devices. The Stark effect of quantum confinement and the anisotropic absorption of the materials were investigated. The ridge waveguide structure electroabsorption modulator fabricated with this kind of material achieves an extinction ratio of more than 20 dB at a drive voltage of 2.4 V and a 3dB bandwidth of light up to 3 GHz