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在Si(111)衬底上用聚苯乙烯溶胶 凝胶甩膜并经 95 0℃真空 (10 -3 Pa)热解处理法 ,制备出晶态SiC薄膜 .用FTIR ,XRD ,TEM ,RamanXPS等方法研究了SiC薄膜的晶体结构、微结构、组成以及各元素的化学态等性质 .结果表明制得的是沿 (0 0 0 1)高度择优取向的晶态 6H SiC薄膜 .膜中SiC晶粒沿c轴柱状生长 ,其最大尺寸约 15 0nm ,膜厚约为 0 3μm ,SiC中的Si/C比约为 1.表层有少许污染C(CH和CO)和少量O(Si2 O3,CO态氧和吸附氧 ) .从对比实验可知 ,在热解时将甩膜的Si片与另一空白Si片面面相贴可明显增加SiC的生成量 .
Crystalline SiC films were prepared on Si (111) substrates by sol-gel method and pyrolyzed at 95 ° C under vacuum (10 -3 Pa). The crystalline SiC films were characterized by FTIR, XRD, TEM and RamanXPS Methods The crystal structure, microstructure, composition and chemical state of each element were studied.The results show that the crystalline 6H SiC films are highly preferentially oriented along (0 0 0 1) Along the c-axis columnar growth, the maximum size of about 15 0nm, a film thickness of about 0 3μm, SiC Si / C ratio of about 1. The surface of a little pollution C (CH and CO) and a small amount of O (Si2 O3, CO state Oxygen and adsorbed oxygen.) From the comparative experiment shows, in the pyrolysis of the rejection of the Si film and another blank Si surface side of the paste can significantly increase the amount of SiC.