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这是一篇关于用于对硅掺杂的一种新的固态片状磷源的供源寿命。微观结构稳定性以及扩散性能的试验报告。这种源的使用温度为900℃至1100℃。源片是多孔性陶瓷片,其中作为有源成分的焦磷酸硅占25％(重量百分比),以惰性高熔点粘合剂作为基体。微观结构的稳定性和热重量分析(TGA)的结果表明,温度高达1050℃时,这种材料的结构还能保持完整并有供源的能力。TGA结果予期这源片的使用寿命在1000℃和900℃下分别为216小时和3400小时,给出了使用这种源片掺杂的硅片的方块电阴,结深和扩散系数的有关实验数据,并且也描述了这种特殊的源片应用方法。 以前的关于硅平面工艺中的P-型掺杂源氮化硼的扩散性能的研究结果已经表明,片状扩散源与既使用液体又使用气体的携带气体扩散系统相比具有几个重要优点。片状扩散源的优点以前已由Goldsmith等人报道过。正是由于片状扩散源的优点,人们才研制了这种新的磷源并对它进行了评价。除了Goldsmith等人报道过的优点外,这种固态源还具有一种独特的优点,就是不会产生有毒性和腐蚀性的付产物。 在使用氮化硼源时,源片表面被氧化,形成三氧化二硼(B_2O_3),然后B_2O_3被蒸发,传输到硅表面。但是没有这么一种高熔点的磷化合物可以象制造氮化硼那样做成陶瓷片,然而Murata证明了焦磷酸
This is an article on the life expectancy of a new source of solid flaky phosphorus for doping silicon. Microstructure stability and diffusion test report. The temperature of this source is from 900 ° C to 1100 ° C. The source sheet is a porous ceramic sheet in which 25% by weight of pyrophosphoric acid as an active ingredient and an inert high-melting point binder as a matrix. The results of the microstructure stability and thermogravimetric analysis (TGA) show that the structure of this material remains intact and has the ability to be sourced at temperatures as high as 1050 ° C. TGA results The life expectancy of this source tablet was 216 hours and 3400 hours at 1000 ° C and 900 ° C, respectively, and the experiments on the squareness, junction depth and diffusion coefficient of the silicon wafer doped with this source chip were given Data, and also describes this particular source slice application method. Previous research on the diffusion behavior of P-type doped boron nitride in silicon planar processes has shown that sheet diffusion sources have several important advantages over carrier gas diffusion systems that use both liquids and gases. The advantages of flake diffusers were previously reported by Goldsmith et al. It is because of the advantages of flake diffusers that one developed this new source of phosphorus and evaluated it. In addition to the advantages reported by Goldsmith et al., This solid state source has the unique advantage of not producing toxic and corrosive byproducts. When using boron nitride source, the surface of the source sheet is oxidized to form boron trioxide (B 2 O 3), and then B 2 O 3 is evaporated and transported to the silicon surface. However, no such high-melting-point phosphorus compound can be made into a ceramic sheet like boron nitride, however, Murata proved that pyrophosphoric acid