一、前言人们所关心的超高速IC及光电IC(?)OEIC的开发正在引人注目,期望GaAs器件的兴旺时代即将来临。但就其实现而言仍有一定的问题,被认为用作基板的半绝缘性GaA单晶的质量就是其中的一个问题。对于半绝缘性GaAs晶体来说,其位错高达10~4～10~5/cm~2的数量级。随着原料中的杂质、熔液组分、熔液的搅拌状态、液封剂B_2O_3中的水分、生长室气体等不同生长条件下其特性发 I. INTRODUCTION People are concerned about the development of ultra-high-speed ICs and optoelectronic ICs (?) OEIC. The development of GaAs devices is on the rise. However, there are still some problems in terms of its realization. The quality of semi-insulating GaA single crystal used as a substrate is considered as one of the problems. For semi-insulating GaAs crystals, the dislocations are as high as 10 ~ 4 ~ 10 ~ 5 / cm ~ 2. With the impurities in the raw materials, the melt component, the stirring state of the melt, the water content of the sealer B_2O_3, the growth chamber gas and the like under different growth conditions