论文部分内容阅读
在速调管及其他电真空器件內,常因二次电子倍增而引起一些不良后果,如效率降低,被电子轰击的表面之过热及运用不稳定等。速调管谐振腔内的介质窗的发热是功率限制的主要因素之一。发热的原因除了介质损耗及表面导电薄膜的I~2R损耗以外,还有因二次电子轰击而引起的发热。二次电子轰击分为下列二种
In klystrons and other vacuum devices, often due to the secondary electron multiplication caused some adverse consequences, such as reduced efficiency, by the electron bombardment of the surface overheating and unstable use of such. The heating of the dielectric window in the klystron resonator is one of the main factors of power limitation. In addition to the dielectric loss and the I ~ 2R loss of the surface conductive film, there is also the heat generated by the secondary electron bombardment. Secondary electron bombardment is divided into the following two