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已采用液封技术可靠地生长磷化铟的完整单晶。晶体是在一个压力箱室中约在27个大气压惰性气氛下从被液封的溶体中拉制出的。为了生产高质量的晶体,必须控制各种生长现象:基本的组分过冷以及双晶。这些方面将和观察到的位错及条纹一起进行讨论。同时也进行了有关生长高纯非掺杂 n 型材料及半绝缘材料的研究。对非掺杂的晶体的电学性质进行了分析。这些晶体的自由电子浓度在一个很大范围内变化可以用补偿来解释。
Liquid crystal sealing technology has been used to reliably grow a single crystal of indium phosphide. The crystals were drawn from the liquid-tight solution in a pressure chamber under an inert atmosphere of about 27 atmospheres. In order to produce high quality crystals, a variety of growth phenomena must be controlled: the basic components are subcooled as well as twinned. These aspects will be discussed along with the dislocations and streaks observed. Also on the growth of high purity non-doped n-type materials and semi-insulating materials research. The electrical properties of undoped crystals were analyzed. The variation of the free electron concentration of these crystals over a wide range can be explained by the compensation.