当半导体的费密能级进入导带,本征光吸收边就会向短波方向移动,这就是Burstein-Moss效应。对Hg_(1-x)Cd_xTe半导体尚未见到有关研究报道。我们采用三个不同组份、高电子浓度的Hg_(1-x)Cd_xTe薄样品:x=0.165,N_D~*=4×10~(16)cm~(-3),d=10μm;x=0.17,N_D~*=5.85×10~(15)cm~(-3),d=9μm;以及x=0.194,N_D~*=2.2×10~(16)cm~(-3),d=24μm。采用PE983红外分光光度计在5～33μm波长范围和77～300K When the fermi level of the semiconductor enters the conduction band, the intrinsic light absorption edge will move to the shortwave direction, which is the Burstein-Moss effect. No reports of Hg_ (1-x) Cd_xTe semiconductors have been reported. We used three thin samples of Hg_ (1-x) Cd_xTe with high electron concentration: x = 0.165, N_D ~ * = 4 × 10 ~ (16) cm -3, d = 0.17, N_D ~ * = 5.85 × 10 ~ (15) cm ~ (-3), d = 9μm, and x = 0.194, N_D ~ * = 2.2 × 10 ~ (16) cm ~ . Using PE983 infrared spectrophotometer in the 5 ~ 33μm wavelength range and 77 ~ 300K